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  savantic semiconductor product specification silicon npn power transistors 2SC3694 d escription with to-220fa package large current ,high speed low saturation voltage applications for use in drivers such as dc-dc converters and actuators. pinning pin description 1 base 2 collector 3 emitter absolute maximum ratings(ta=25 ) symbol parameter conditions value unit v cbo collector-base voltage open emitter 100 v v ceo collector- emitter voltage open base 60 v v ebo emitter-base voltage open collector 7 v i c collector current 15 a i cm collector current-peak 30 a i b base current 7.5 a t a =25 2 p t total power dissipation t c =25 30 w t j junction temperature 150  t stg storage temperature -55~150 
savantic semiconductor product specification 2 silicon npn power transistors 2SC3694 c haracteristics tj=25 unless otherwise specified symbol parameter conditions min typ. max unit v ceo(sus) collector-emitter sustaining voltage i c =8a; i b =0.8a;l=1mh 60 v v ce(sat)1 collector-emitter saturation voltage i c =8a ; i b =0.4a 0.3 v v ce(sat)2 collector-emitter saturation voltage i c =12a ; i b =0.6a 0.5 v v be(sat)1 base-emitter saturation voltage i c =8a ; i b =0.4a 1.2 v v be(sat)2 base-emitter saturation voltage i c =12a ; i b =0.6a 1.5 v i cbo collector cut-off current v cb =60v;i e =0 10 a i cer collector cut-off current v cb =60v;r be =50 ? ;ta=125c 1.0 ma i cex1 collector cut-off current v cb =60v; v be =-1.5v 10 a i cex2 collector cut-off current v cb =60v; v be =-1.5v;ta=125c 1.0 ma i ebo emitter cut-off current v eb =5v;i c =0 10 a h fe-1 dc current gain i c =1.5a ; v ce =2v 100 h fe-2 dc current gain i c =3.0a ; v ce =2v 100 400 h fe-3 dc current gain i c =8.0a ; v ce =2v 60 cob collector capacitance v cb =10v;i e =0;f=1.0mhz 180 pf f t transition frequency i c =1.5a ; v ce =10v 120 mhz switching times t on turn-on time 0.3 s t s storage time 1.5 s t f fall time i c =8.0a; i b1 =-i b2 =0.4a v cc =50v ,r l =6.3 ? 0.3 s  h fe-2 classifications m l k 100-120 150-300 200-400
savantic semiconductor product specification 3 silicon npn power transistors 2SC3694 package outline fig.2 outline dimensions (unindicated tolerance:0.15 mm)


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